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CEP60N10V डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEP60N10V
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEP60N10V?> डेटा पत्रक पीडीएफ

CEP60N10V pdf
CEP60N10V/CEB60N10V
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 30A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 50V, ID = 30A,
VGS = 10V, RGEN = 2.5
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 30A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 57A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 700µH, IAS = 40A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C
Min
100
3
Typ
20
2520
400
30
26
4
43
7
53
16
22
Max Units
1
100
-100
V
µA
nA
nA
5V
24 m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
57 A
1.3 V
2

विन्यास 4 पेज
डाउनलोड[ CEP60N10V Datasheet.PDF ]


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