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CEP14P20 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEP14P20
समारोह P-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEP14P20?> डेटा पत्रक पीडीएफ

CEP14P20 pdf
CEP14P20/CEB14P20
CEF14P20
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = -250µA
VDS = -200V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
-200
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
VGS = -10V, ID = -6.8A
-2
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = -25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -100V, ID = -13.5A,
VGS = -10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS = -160V, ID = -13.5A,
VGS = -10V
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS f
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = -13.5A g
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 7.4A .
g.Full package VSD test condition IS = 7.4A .
h.L = 3mH, IAS =13.5A, VDD = 25V, RG = 25, Starting TJ = 25 C.
Typ
0.30
1620
240
50
28
74
260
120
52
9
25
Max Units
-1
100
-100
V
µA
nA
nA
-4 V
0.36
pF
pF
pF
56 ns
148 ns
520 ns
240 ns
68 nC
nC
nC
-13.5
-1.5
A
V
4
2

विन्यास 4 पेज
डाउनलोड[ CEP14P20 Datasheet.PDF ]


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