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NCE80R1K2F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Super Junction Power MOSFET - NCE Power Semiconductor

भाग संख्या NCE80R1K2F
समारोह N-Channel Super Junction Power MOSFET
मैन्युफैक्चरर्स NCE Power Semiconductor 
लोगो NCE Power Semiconductor लोगो 
पूर्व दर्शन
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<?=NCE80R1K2F?> डेटा पत्रक पीडीएफ

NCE80R1K2F pdf
NCE80R1K2D,NCE80R1K2,NCE80R1K2F
Parameter
Drain Source voltage slope, VDS 480 V,
Reverse diode dv/dtVDS 480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Symbol
dv/dt
dv/dt
TJ,TSTG
NCE80R1K2D
NCE80R1K2F
NCE80R1K2
50
15
-55...+150
Unit
V/ns
V/ns
°C
Table 2. Thermal Characteristic
Parameter
Symbol
NCE80R1K2D
NCE80R1K2
Thermal ResistanceJunction-to-CaseMaximum
RthJC
1.56
Thermal ResistanceJunction-to-Ambient Maximum
RthJA
62
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
NCE80R1K2F
3.93
80
Unit
°C /W
°C /W
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VGS=0V ID=250μA
VDS=800V,VGS=0V
VDS=800V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=2.5A
800
1
100
±100
2.5 3
3.5
1000 1200
V
μA
μA
nA
V
m
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Intrinsic gate resistance
gFS VDS = 20V, ID = 2.5A
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Qg
Qgs
VDS=480V,ID=5A,
VGS=10V
Qgd
RG f = 1 MHz open drain
5.5
680
55
3.5
14.5 22
2.8
5.5
2
S
pF
pF
pF
nC
nC
nC
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=480V,ID=2.5A,
RG=15,VGS=10V
7
5
70 85
9 15
nS
nS
nS
nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
ISD
ISDM
TC=25°C
VSD Tj=25°C,ISD=5A,VGS=0V
trr
Qrr Tj=25°C,IF=5A,di/dt=100A/μs
Irrm
5
15
0.85 1.2
240
2.2
16
A
A
V
nS
uC
A
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
http://www.ncepower.com
v1.0

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