DataSheet.in

NCE80T900I डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Super Junction Power MOSFET - NCE Power Semiconductor

भाग संख्या NCE80T900I
समारोह N-Channel Super Junction Power MOSFET
मैन्युफैक्चरर्स NCE Power Semiconductor 
लोगो NCE Power Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=NCE80T900I?> डेटा पत्रक पीडीएफ

NCE80T900I pdf
NCE80T900K,NCE80T900I
Parameter
Drain Source voltage slope, VDS 480 V,
Reverse diode dv/dtVDS 480 V,ISD<ID
Operating Junction and Storage Temperature Range
Symbol
dv/dt
dv/dt
TJ,TSTG
Value
50
15
-55...+150
Unit
V/ns
V/ns
°C
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
RthJC
RthJA
Value
1.27
62
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=800V,VGS=0V
VDS=800V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=4A
Dynamic Characteristics
Forward Transconductance
gFS VDS = 20V, ID =4A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=640V,ID=6A,
Qgs
VGS=10V
Qgd
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=400V,ID=3A,
RG=3Ω,VGS=10V
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
Forward on voltage
VSD Tj=25°C,ISD=6A,VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
trr
Tj=25°C,IF=3A,
Qrr
di/dt=100A/μs
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25Ω
Min Typ Max Unit
800 V
1 μA
100 μA
±100 nA
3 3.5
4
V
750 900 mΩ
6
1320
33
2
22.8
7.7
6.9
S
pF
pF
pF
nC
nC
nC
10 nS
5 nS
53 70 nS
6 9 nS
6
24
0.9 1.2
260
1.7
13
A
A
V
nS
uC
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
http://www.ncepower.com
v1.0

विन्यास 8 पेज
डाउनलोड[ NCE80T900I Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
NCE80T900N-Channel Super Junction Power MOSFETNCE Power Semiconductor
NCE Power Semiconductor
NCE80T900DN-Channel Super Junction Power MOSFETNCE Power Semiconductor
NCE Power Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English