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NCE80T900 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Super Junction Power MOSFET - NCE Power Semiconductor

भाग संख्या NCE80T900
समारोह N-Channel Super Junction Power MOSFET
मैन्युफैक्चरर्स NCE Power Semiconductor 
लोगो NCE Power Semiconductor लोगो 
पूर्व दर्शन
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<?=NCE80T900?> डेटा पत्रक पीडीएफ

NCE80T900 pdf
NCE80T900D,NCE80T900,NCE80T900F
Parameter
Symbol
NCE80T900D
NCE80T900F
NCE80T900
Unit
Drain Source voltage slope, VDS 480 V,
Reverse diode dv/dtVDS 480 V,ISD<ID
Operating Junction and Storage Temperature Range
dv/dt
dv/dt
TJ,TSTG
50
15
-55...+150
V/ns
V/ns
°C
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Symbol
NCE80T900D
NCE80T900F
NCE80T900
Unit
Thermal ResistanceJunction-to-CaseMaximum
RthJC
1.28
Thermal ResistanceJunction-to-Ambient Maximum
RthJA
62
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
3.86 °C /W
80 °C /W
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
BVDSS
IDSS
IDSS
VGS=0V ID=250μA
VDS=800V,VGS=0V
VDS=800V,VGS=0V
800
V
1 μA
100 μA
Gate-Body Leakage Current
IGSS VGS=±20V,VDS=0V
±100 nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
3 3.5
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=4A
750 900 mΩ
Dynamic Characteristics
Forward Transconductance
gFS VDS = 20V, ID =4A
6S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
1320
33
2
pF
pF
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=640V,ID=6A,
Qgs
VGS=10V
Qgd
22.8
7.7
6.9
nC
nC
nC
Switching times
Turn-on Delay Time
td(on)
10 nS
Turn-on Rise Time
tr VDD=400V,ID=3A,
5 nS
Turn-Off Delay Time
td(off)
RG=3Ω,VGS=10V
53 70 nS
Turn-Off Fall Time
tf
6 9 nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
6A
24 A
Forward on voltage
VSD Tj=25°C,ISD=6A,VGS=0V
0.9 1.2
V
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
trr
Tj=25°C,IF=3A,
Qrr
di/dt=100A/μs
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
260 nS
1.7 uC
13 A
2. Tj=25,VDD=50V,VG=10V, RG=25Ω
Wuxi NCE Power Co., Ltd
Page
2 http://www.ncepower.com
v1.0

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