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NCEP6020AS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Super Trench Power MOSFET - NCE Power Semiconductor

भाग संख्या NCEP6020AS
समारोह N-Channel Super Trench Power MOSFET
मैन्युफैक्चरर्स NCE Power Semiconductor 
लोगो NCE Power Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=NCEP6020AS?> डेटा पत्रक पीडीएफ

NCEP6020AS pdf
http://www.ncepower.com
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=60V,VGS=0V
Gate-Body Leakage Current
On Characteristics (Note 3)
IGSS VGS=±20V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
VGS=4.5V, ID=18A
Forward Transconductance
Dynamic Characteristics (Note4)
gFS VDS=5V,ID=20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=30V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=30V, RL=1.7Ω
VGS=10V,RG=3Ω
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
VDS=30V,ID=20A,
Qgs
VGS=10V
Qgd
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=20A
IS
Reverse Recovery Time
Reverse Recovery Charge
trr TJ = 25°C, IF = IS
Qrr di/dt = 100A/μs(Note3)
Pb Free Product
NCEP6020AS
Min Typ Max Unit
60 -
-
V
- - 1 μA
- - ±100 nA
1.0 1.7
- 4.0
- 4.6
35 -
2.4
4.5
5.4
-
V
S
- 4000
- 680
- 23
-
-
-
PF
PF
PF
- 11
-5
- 56
- 12
- 67
- 12
- 8.5
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
20
- 48
-
- 60
-
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Co., Ltd
Page2
V1.0

विन्यास 7 पेज
डाउनलोड[ NCEP6020AS Datasheet.PDF ]


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