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NCEP4085EG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - NCE Power Semiconductor

भाग संख्या NCEP4085EG
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स NCE Power Semiconductor 
लोगो NCE Power Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=NCEP4085EG?> डेटा पत्रक पीडीएफ

NCEP4085EG pdf
http://www.ncepower.com
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=40V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VGS=4.5V, ID=20A
VDS=5V,ID=20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=20V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=20V,ID=20A
VGS=10V,RG=1.6
VDS=20V,ID=20A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=85A
IS
trr TJ = 25°C, IF = IS
Qrr di/dt = 500A/μs(Note3)
Pb Free Product
NCEP4085EG
Min Typ Max Unit
40 - V
- - 1 μA
- - ±10 μA
1.0 1.5
- 3.0
- 4.0
40
2.2
3.3
4.3
-
V
m
m
S
- 2100 2600
- 639 800
- 23.6 29
PF
PF
PF
- 7.5
-
-4
-
- 26
-
- 3.3
-
- 34.3 47
- 7.1
- 3.5
nS
nS
nS
nS
nC
nC
nC
- 1.2
- - 85
- 19
-
- 40
-
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=20V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Co., Ltd
Page 2
V1.0

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डाउनलोड[ NCEP4085EG Datasheet.PDF ]


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