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NCE0102M डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Power MOSFET - NCE Power Semiconductor

भाग संख्या NCE0102M
समारोह N-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स NCE Power Semiconductor 
लोगो NCE Power Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=NCE0102M?> डेटा पत्रक पीडीएफ

NCE0102M pdf
http://www.ncepower.com
Pb Free Product
NCE0102M
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=1A
VDS=5V,ID=1A
1.2 1.8
- 210
1-
2.5
240
-
V
m
S
Clss
Coss
VDS=50V,VGS=0V,
F=1.0MHz
- 190
- 22
-
-
PF
PF
Crss
- 13
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
-6
VDD=50V,ID=1.3A,RL=39
VGS=10V,RG=1
-
-
10
10
-6
VDS=50V,ID=1.3A,
VGS=10V
- 5.2
- 0.75
- 1.4
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VSD
VGS=0V,IS=1.3A
- - 1.2
V
IS
--
2
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Co., Ltd
Page 2
v1.0

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डाउनलोड[ NCE0102M Datasheet.PDF ]


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