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NCE80H14 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Power MOSFET - NCE Power Semiconductor

भाग संख्या NCE80H14
समारोह N-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स NCE Power Semiconductor 
लोगो NCE Power Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=NCE80H14?> डेटा पत्रक पीडीएफ

NCE80H14 pdf
http://www.ncepower.com
Pb Free Product
NCE80H14
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.6 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=80V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VDS=5V,ID=20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=40V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=40V,RL=2,
RG=3,VGS=10V
ID=20A,VDD=40V,VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=20A
IS
trr Tj=25,IF=20A,
Qrr di/dt=100A/uS (Note3)
Min Typ
80 -
--
--
23
- 5.9
- 50
- 4861
- 488
- 362
- 30
- 17
- 44
- 58
- 114
- 21
- 46
--
--
- 31
- 130
Max
-
1
±100
4
6.5
-
-
-
-
-
-
-
-
-
-
-
1.2
140
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=40V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Co., Ltd
Page 2
v1.1

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