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NCE80H12H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Power MOSFET - NCE Power Semiconductor

भाग संख्या NCE80H12H
समारोह N-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स NCE Power Semiconductor 
लोगो NCE Power Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=NCE80H12H?> डेटा पत्रक पीडीएफ

NCE80H12H pdf
http://www.ncepower.com
Pb Free Product
NCE80H12H
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
EAS
TJ,TSTG
1400
-55 To 175
mJ
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.68 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=80V,VGS=0V
VGS=±20V,VDS=0V
80 89
-
--
1
- - ±100
V
μA
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=40A
VDS=25V,ID=57A
23
- 4.9
90 -
4
6
-
V
m
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 6500
- 520
-
-
PF
PF
Crss
- 460
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=2A
VGS=10V,RG=2.5
VDS=30V,ID=30A,
VGS=10V
- 26
- 24
- 91
- 39
- 163
- 31
- 64
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=40A
-
1.2 V
IS
- - 120
A
trr
TJ = 25°C, IF = 40A
- 42
60
nS
Qrr
di/dt = 100A/μs(Note3)
- 66
80
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=40V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0

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डाउनलोड[ NCE80H12H Datasheet.PDF ]


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