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NCE8651Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Power MOSFET - NCE Power Semiconductor

भाग संख्या NCE8651Q
समारोह N-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स NCE Power Semiconductor 
लोगो NCE Power Semiconductor लोगो 
पूर्व दर्शन
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<?=NCE8651Q?> डेटा पत्रक पीडीएफ

NCE8651Q pdf
http://www.ncepower.com
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
VGS=±10V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
VGS=4.5V, ID=10A
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
RDS(ON)
gFS
VGS=4 V, ID=5A
VGS=3.1V, ID=5A
VGS=2.5V, ID=2.5A
VDS=10V,ID=5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=10V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=10V,ID=5A
VGS=10V,RGEN=50
VDS=10V,ID=10A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=10A
IS
Pb Free Product
NCE8651Q
Min Typ Max Unit
20 - V
- - 1 μA
- - ±10 μA
0.5 0.7
- 7.2
- 7.4
7.8
8.6
5-
1
11
11.5
12.5
15.5
-
V
m
S
- 1255
- 220
- 168
-
-
-
PF
PF
PF
- 300
- 1000
- 4000
- 2500
- 29
- 5.2
- 6.3
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- 0.85 1.2
--
10
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0

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डाउनलोड[ NCE8651Q Datasheet.PDF ]


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