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BCV62B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP Silicon Double Transistor - Infineon Technologies AG

भाग संख्या BCV62B
समारोह PNP Silicon Double Transistor
मैन्युफैक्चरर्स Infineon Technologies AG 
लोगो Infineon Technologies AG लोगो 
पूर्व दर्शन
1 Page
		
<?=BCV62B?> डेटा पत्रक पीडीएफ

BCV62B pdf
BCV62
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics of T1
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
V(BR)CEO 30
-
-V
V(BR)CBO 30
-
-
V(BR)EBO 6 - -
ICBO
- - 15 nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 0.1 mA, VCE = 5 V
DC current gain 1)
IC = 2 mA, VCE = 5 V
BCV62A
BCV62B
BCV62C
ICBO
hFE
hFE
--
100 -
5 µA
--
125 180 220
220 290 475
420 520 800
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
mV
- 75 300
- 250 650
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBEsat
- 700 -
- 850 -
VBE(ON)
600 650 750
- - 820
1) Pulse test: t 300µs, D = 2%
2
Jul-11-2001

विन्यास 5 पेज
डाउनलोड[ BCV62B Datasheet.PDF ]


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