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BCV61B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) - Siemens Semiconductor Group

भाग संख्या BCV61B
समारोह NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
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<?=BCV61B?> डेटा पत्रक पीडीएफ

BCV61B pdf
BCV 61
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics for transistor T1
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 30 V, IE = 0
VCB = 30 V, IE = 0, TA = 150 ˚C
DC current gain1)
IC = 0.1 mA, VCE = 5 V
IC = 2 mA, VCE = 5 V
BCV 61 A
BCV 61 B
BCV 61 C
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage1)
IC = 10 mA, IC = 0.5 mA
IC = 100 mA, IC = 5 mA
Base-emitter voltage
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 30
V
V(BR)CB0 30
V(BR)EBS 6 – –
ICB0
hFE
VCEsat
VBEsat
VBE
– – 15 nA
– – 5 µA
100 –
110 180 220
200 290 450
420 520 800
mV
– 90 250
– 200 600
– 700 –
– 900 –
580 660 700
– – 770
1) Pulse test conditions: t 300 µs, D = 2 %.
Semiconductor Group
2

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डाउनलोड[ BCV61B Datasheet.PDF ]


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