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BCV61A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon Double Transistor - Infineon Technologies AG

भाग संख्या BCV61A
समारोह NPN Silicon Double Transistor
मैन्युफैक्चरर्स Infineon Technologies AG 
लोगो Infineon Technologies AG लोगो 
पूर्व दर्शन
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<?=BCV61A?> डेटा पत्रक पीडीएफ

BCV61A pdf
BCV61
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics of T1
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IB = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 0.1 mA, VCE = 5 V
DC current gain 1)
IC = 2 mA, VCE = 5 V
BCV61A
BCV61B
BCV61C
V(BR)CEO 30
V(BR)CBO 30
V(BR)EBO 6
ICBO
-
ICBO
-
hFE 100
hFE
110
200
420
- -V
--
--
- 15 nA
- 5 µA
- --
180 220
290 450
520 800
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VCEsat
mV
- 90 250
- 200 600
VBEsat
- 700 -
- 900 -
VBE(ON)
580 660 700
- - 770
1) Pulse test: t 300µs, D = 2%
2
Jul-10-2001

विन्यास 5 पेज
डाउनलोड[ BCV61A Datasheet.PDF ]


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