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BCV49 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon Darlington Transistors - Infineon Technologies AG

भाग संख्या BCV49
समारोह NPN Silicon Darlington Transistors
मैन्युफैक्चरर्स Infineon Technologies AG 
लोगो Infineon Technologies AG लोगो 
पूर्व दर्शन
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<?=BCV49?> डेटा पत्रक पीडीएफ

BCV49 pdf
BCV29, BCV49
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
20
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCV29
IC = 10 mA, IB = 0 , BCV49
V(BR)CEO
30
60
-
-
-
-
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCV29
IC = 100 µA, IE = 0 , BCV49
V(BR)CBO
40
80
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 10
-
-
Collector-base cutoff current
VCB = 30 V, IE = 0 , BCV29
VCB = 60 V, IE = 0 , BCV49
VCB = 30 V, IE = 0 , TA = 150 °C, BCV29
VCB = 60 V, IE = 0 , TA = 150 °C, BCV49
ICBO
- - 0.1
- - 0.1
- - 10
- - 10
Emitter-base cutoff current
VEB = 4 V, IC = 0
DC current gain1)
IC = 100 µA, VCE = 1 V, BCV29
IC = 100 µA, VCE = 1 V, BCV49
IC = 10 mA, VCE = 5 V, BCV29
IC = 10 mA, VCE = 5 V, BCV49
IC = 100 mA, VCE = 5 V, BCV29
IC = 100 mA, VCE = 5 V, BCV49
IC = 0.5 A, VCE = 5 V, BCV29
IC = 0.5 A, VCE = 5 V, BCV49
IEBO
hFE
--
4000
2000
10000
4000
20000
10000
4000
2000
-
-
-
-
-
-
-
-
100
-
-
-
-
-
-
-
-
Unit
V
µA
nA
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VCEsat - - 1 V
VBEsat - - 1.5
2 2011-10-05

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डाउनलोड[ BCV49 Datasheet.PDF ]


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