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BCV46 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP Silicon Darlington Transistors (For general AF applications High collector current) - Siemens Semiconductor Group

भाग संख्या BCV46
समारोह PNP Silicon Darlington Transistors (For general AF applications High collector current)
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
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<?=BCV46?> डेटा पत्रक पीडीएफ

BCV46 pdf
BCV 26
BCV 46
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
BCV 26
BCV 46
Collector-base breakdown voltage
IC = 100 µA
BCV 26
BCV 46
Emitter-base breakdown voltage, IE = 10 µA
Collector cutoff current
VCB = 30 V
VCB = 60 V
VCB = 30 V, TA = 150 ˚C
VCB = 60 V, TA = 150 ˚C
BCV 26
BCV 46
BCV 26
BCV 46
Emitter cutoff current, VEB = 4 V
DC current gain1)
IC = 100 µA, VCE = 1 V
IC = 10 mA, VCE = 5 V
IC = 100 mA, VCE = 5 V
IC = 0.5 A, VCE = 5 V
BCV 26
BCV 46
BCV 26
BCV 46
BCV 26
BCV 46
BCV 26
BCV 46
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
Base-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
V(BR)CE0
V(BR)CB0
30
60
V(BR)EB0
ICB0
IEB0
hFE
VCEsat
40 –
80 –
10 –
––
––
––
––
––
4000
2000
10000
4000
20000
10000
4000
2000
––
VBEsat
V
100 nA
100 nA
10 µA
10 µA
100 nA
1V
1.5
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
fT
Cobo
200 –
4.5 –
MHz
pF
1) Pulse test: t 300 µs, D = 2 %.
Semiconductor Group
2

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BCV46PNP Silicon Darlington Transistors (For general AF applications High collector current)Siemens Semiconductor Group
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