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BCV46 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP Darlington transistors - NXP

भाग संख्या BCV46
समारोह PNP Darlington transistors
मैन्युफैक्चरर्स NXP 
लोगो NXP लोगो 
पूर्व दर्शन
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<?=BCV46?> डेटा पत्रक पीडीएफ

BCV46 pdf
Philips Semiconductors
PNP Darlington transistors
Product specification
BCV26; BCV46
FEATURES
High current (max. 500 mA)
Low voltage (max. 60 V)
Very high DC current gain (min. 10000).
APPLICATIONS
Where very high amplification is required.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complements: BCV27 and BCV47.
MARKING
TYPE NUMBER
BCV26
BCV46
MARKING CODE(1)
FD
FE
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
handbook, halfpage
3
1
Top view
2
13
TR1
TR2
2
MAM299
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
collector-base voltage
BCV26
BCV46
collector-emitter voltage
BCV26
BCV46
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
VBE = 0
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
− −40 V
− −80 V
− −30 V
− −60 V
− −10 V
500
mA
800
mA
100
mA
250 mW
65
+150
°C
150 °C
65
+150
°C
1999 Apr 08
2

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डाउनलोड[ BCV46 Datasheet.PDF ]


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