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BCV28 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP Darlington transistors - NXP

भाग संख्या BCV28
समारोह PNP Darlington transistors
मैन्युफैक्चरर्स NXP 
लोगो NXP लोगो 
पूर्व दर्शन
1 Page
		
<?=BCV28?> डेटा पत्रक पीडीएफ

BCV28 pdf
Philips Semiconductors
PNP Darlington transistors
Product specification
BCV28; BCV48
FEATURES
Very high DC current gain (min. 10000)
High current (max. 500 mA)
Low voltage (max. 60 V).
APPLICATIONS
Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a SOT89 plastic package.
NPN complements: BCV29 and BCV49.
MARKING
TYPE NUMBER
BCV28
BCV48
MARKING CODE
ED
EE
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector
base
handbook, halfpage
1
Bottom view
2
3
32
TR1
TR2
1
MAM301
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
collector-base voltage
BCV28
BCV48
collector-emitter voltage
BCV28
BCV48
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
VBE = 0
open collector
Tamb 25 °C; note 1
65
65
40 V
80 V
30
60
10
500
800
100
1.3
+150
150
+150
V
V
V
mA
mA
mA
W
°C
°C
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 08
2

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डाउनलोड[ BCV28 Datasheet.PDF ]


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