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BCV26 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP Darlington Transistor - Fairchild Semiconductor

भाग संख्या BCV26
समारोह PNP Darlington Transistor
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=BCV26?> डेटा पत्रक पीडीएफ

BCV26 pdf
PNP Darlington Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 100 nA, IC = 0
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
30 V
40 V
10 V
0.1 µA
0.1 µA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 100 mA, IB = 0.1 mA
IC = 100 mA, IB = 0.1 mA
4,000
10,000
20,000
1.0 V
1.5 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
CC Collector Capacitance
IC = 30 mA, VCE = 5.0 V,
f = 100 MHz
VCB = 30 V, IE = 0, f = 1.0 MHz
220 MHz
3.5 pF
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
50
VCE = 5V
40
30 125 °C
20 25 °C
10 - 40 °C
0
0.01
0.1
I C - COLLECTOR CURRENT (A)
1
Collector-Emitter Saturation
Voltage vs Collector Current
1.6
β = 1000
1.2
- 40 ºC
0.8
0.4
25 °C
125 ºC
0
0.001
0.01 0.1
I C - COLLECTOR CURRENT (A)
1

विन्यास 4 पेज
डाउनलोड[ BCV26 Datasheet.PDF ]


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