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BL2N65D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power Mosfet - GME

भाग संख्या BL2N65D
समारोह N-Channel Power Mosfet
मैन्युफैक्चरर्स GME 
लोगो GME लोगो 
पूर्व दर्शन
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<?=BL2N65D?> डेटा पत्रक पीडीएफ

BL2N65D pdf
Production specification
2 Amps, 600 Volts N-CHANNEL MOSFET BL2N65I/2N65D
4. ISD2.4A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
ELECTRICAL CHARACTERISTICS@ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ΔBVDSS/
ΔTJ
VGS=0V,ID=250μA
ID=250UA,Referenced to 25°C
650
-
-
0.4
Zero Gate Voltage Drain Current
Gate-body Leakage
Forward
Reverse
Gate Threshold Voltage
Static drain-Source on-resistance
IDSS
IGSS
VGS(th)
RDS(ON)
VDS=600V, VGS=0V
VDS=480V,TC=125
VDS=0V, VGS=30V
VDS=0V, VGS=-30V
VDS=VGS, ID=250μA
VGS=10V,ID=1A,
--
--
--
--
2.0 -
- 3.8
Forward transconductance
gFS
VDS=50V,ID=1A (Note1)
- 2.25
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source
Diode Forward Current
Ciss
Coss
Crss
td(on)
tR
td(off)
tf
Qg
Qgs
Qgd
ISD
VDS=25V,VGS=0V,f=1.0MHz
VDD=300V,ID=2.4A,RG=25
(Note1,2)
VDS=480V,ID=2.4A,VGS=10V
(Note1,2)
-
-
-
-
-
-
-
-
-
-
-
270
40
5
10
25
20
25
9.0
1.6
4.3
-
Maximum Pulsed Drain-Source
Diode Forward Current
ISM
--
Drain-Sourse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Notes:
VSD
trr
Qrr
VGS=0V,ISD=2.0A
VGS=0V,ISD=2.4A,
dIF/dt=100A/us (Note1)
--
- 180
- 0.72
1. Pulse Test: Pulse Width 300μs, Duty Cycle2%
2. Essentially Independent of Operating Temperature
MAX
-
-
10
100
100
-100
4.0
5
-
350
50
7
30
60
50
60
11
-
-
2.0
8.0
1.4
-
-
UNIT
V
V/
μA
nA
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
μC
W097
Rev.A
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डाउनलोड[ BL2N65D Datasheet.PDF ]


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