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BL15N30 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power Mosfet - GME

भाग संख्या BL15N30
समारोह N-Channel Power Mosfet
मैन्युफैक्चरर्स GME 
लोगो GME लोगो 
पूर्व दर्शन
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<?=BL15N30?> डेटा पत्रक पीडीएफ

BL15N30 pdf
N-Channel Power MOSFET
Production specification
BL15N30
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=250µA
300
Drain-Source Leakage Current
IDSS VDS=300V, VGS=0V
-
Gate- Source Leakage Current
IGSS VDS=0V, VGS=±30V
-
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250μA
3.0
Static drain-Source On-State resistance RDS(on) VGS=10V,ID=7.5A
-
Drain-Source Diode Forward Voltage
VSD
ISD=15A,VGS=0
-
Input Capacitance
CISS
-
Output Capacitance
COSS
VDS=25V,VGS=0V,f=1.0MHz
-
Reverse Transfer Capacitance
CRSS
-
Turn-On Delay Time
tD(ON)
-
Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD =200V, ID=15A,
RG=25
-
-
Fall Time
tF
-
Total Gate Charge
Qg
Gate-source Charge
Gate-drain Charge
Qgs
VDS=320V,VGS=10V
ID=15A
Qgd
Maximum Body-Diode Continuous
Current
IS
-
-
-
-
Maximum Body-Diode Pulsed Current ISM
-
Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 6.5mH, IAS = 15A, VDD = 50V, RG = 25 , Starting TJ = 25°C
3: ISD   15A, di/dt   200A/ s, VDD   BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
TYP
-
-
-
-
0.24
-
1310
210
17
26
55
72
40
28
8
12
-
-
MAX
-
1
±100
5.0
0.3
1.4
1750
280
25
62
120
154
90
36
15
60
UNIT
V
μA
nA
V
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
X132
Rev.A
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डाउनलोड[ BL15N30 Datasheet.PDF ]


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