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BL3404 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power Mosfet - GME

भाग संख्या BL3404
समारोह N-Channel Power Mosfet
मैन्युफैक्चरर्स GME 
लोगो GME लोगो 
पूर्व दर्शन
1 Page
		
<?=BL3404?> डेटा पत्रक पीडीएफ

BL3404 pdf
Production specification
N-Channel Enhancement Mode Field Effect Transistor BL3404
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-body Leakage
Gate Threshold Voltage
On state drain current
BVDSS
IDSS
IGSS
VGS(th)
IDON)
VGS=0V,ID=250μA
VDS=24 VGS=0V
VDS=0V, VGS=±12V
VDS=VGS, ID=250μA
VDS=5V,VGS=4.5V
30 - - V
- - 1 μA
- - 100 nA
1.2 2.1 2.6 V
64 - - A
Static drain-Source on-resistance
RDS(ON)
VGS=10V,ID=5.8A
VGS=4.5V,ID=4.8A
-
-
18.4 25
24.5 35
m
Forward Transconductance
Drain-Source diode forward voltage
Maximum Body-Diode Continuous Current
DYNAMIC CHARACTERISTICSC
gFS
VSD
IS
VDS=5V,ID=5.8A
VGS=0V,Is=1A
- 22 -
S
- 0.75 1.0 V
- - 2.5 A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING CHARACTERISTICSC
CISS
COSS
CRSS
Rg
VDS=15V,VGS=0V,f=1.0MHz
VDS=0V,VGS=0V,f=1.0MHz
-
-
-
373 448
67 -
41 -
1.8 2.8
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tD(ON)
tr
tD(OFF)
tf
Qg
Qgs
Qgd
trr
Qrr
VDS = 15V,
RL = 2.6,
VGS= 10V,
RGEN= 3
VDS = 15V
ID= 5.8A
VGS= 10V,
IF=5.8A, dI/dt=100A/μs
IF=5.8A, dI/dt=100A/μs
- 4.5 6.5 ns
- 2.4 - ns
- 14.8 -
ns
- 2.5 - ns
- 7.1 11 nC
- 1.4 - nC
- 1.7 - nC
- 10.5 12.6 nS
- 4.5 - nC
C202
Rev.A
www.gmesemi.com
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डाउनलोड[ BL3404 Datasheet.PDF ]


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