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BL2303 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel Power Mosfet - GME

भाग संख्या BL2303
समारोह P-Channel Power Mosfet
मैन्युफैक्चरर्स GME 
लोगो GME लोगो 
पूर्व दर्शन
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<?=BL2303?> डेटा पत्रक पीडीएफ

BL2303 pdf
Production specification
P-Channel Enhancement Mode Field Effect Transistor BL2303
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
STATIC PARAMETERS
Drain-Source
Voltage
Breakdown
Zero Gate Voltage Drain
Current
Gate-body Leakage
Gate Threshold Voltage
On-State Drain Current
Static
drain-Source
on-resistance
Drain-Source diode forward
voltage
Forward Transconductance
Maximum Body-Diode
Continuous Current
BVDSS
IDSS
IGSS
VGS(th)
ID(on)
RDS(ON)
VSD
gFS
IS
VGS=0V,ID= -250μA
VDS=-30V,VGS=0V
VDS=0V, VGS=±20V
VDS=VGS, ID= -250μA
VDS=-5V,VGS=-10V
VGS= -10V, ID= -1.9A
VGS= -4.5V, ID= -1.4A
IS= -1.5A,VGS=0V
VDS =-5V, ID=-1.9A
DYNAMIC CHARACTERISTICSC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
CISS
COSS
CRSS
RG
SWITCHING CHARACTERISTICSC
VGS=0V, VDS=-15V,
f=1MHz
VGS=0V,VDS=0V,f=1MHz
-30 - - V
- - -1 μA
- - ±100 nA
-1 - -3 V
-10 - - A
-
-
158
275
190
330
m
- -0.8 -1.2 V
2-S
- - -1.75 A
- 155
- 35
-
- 25
-
-4 8
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
tD(ON)
tr
tD(OFF)
tf
Qg
VDD=-15V,RL=10,IDS=-1.5A,
VGEN=-10V,RG=1
VGS=-15V,VDS= -10V,
ID= -1.9A
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
VGS=-15V,VDS= -4.5V,
ID=-1.9A
Body Diode Reverse Recovery
Time
trr
Body Diode Reverse Recovery
Charge
Qrr
IF= -1.5A,dI/dt=100A/μs
-
-
-
-
-
-
-
-
-
-
48
11 18
11 18
8 18
15.5 22
24
0.6 -
1-
17 26
7-
ns
ns
ns
ns
nC
nC
nC
ns
nC
C306
Rev.A
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डाउनलोड[ BL2303 Datasheet.PDF ]


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