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BL1N60F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - GME

भाग संख्या BL1N60F
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स GME 
लोगो GME लोगो 
पूर्व दर्शन
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<?=BL1N60F?> डेटा पत्रक पीडीएफ

BL1N60F pdf
Production specification
N-Channel Enhancement Mode Field Effect Transistor
BL1N60F
ELECTRICAL CHARACTERISTICS
Parameter
Symbol Test conditions
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=250μA
Bvdss Temperature Coefficient
Gate Threshold Voltage
Drain to Source Leakage Current
Static drain-Source on-resistance
Gate-body Leakage
Forward
Reverse
BVDSS/
TJ
VGS(TH)
IDSS
RDS(ON)
ID=250mA,
VDS= VGS, ID =250mA
VDS=600V, VGS=0V
VDS=480V, Ta=125
VGS=10V,ID=0.6A
IGSS VGS=±30V
Forward Transconductance
gfs VDS=50V, ID =0.6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Ciss
Coss
Crss
td(ON)
VGS = 0V VDS = 25V
f = 1.0MHz
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
ID =1.2A VDD = 300V
VGS = 10V
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Qg
Qgs
ID =1.2A VDD =480V
VGS = 10V
Qgd
Reverse Recovery Time
Reverse Recovery Charge
trr IS=1.2A,Tj = 25
dIF/dt=100A/us,
Qrr VGS=0V
Note: 1. Pulse Test: Pulse Width 300μs, Duty Cycle2%
2. Essentially Independent of Operating Temperature
MIN TYP MAX UNIT
600 - - V
- 0.4 - V/
2 4V
- - 10
100 mA
- 9.3 11.5
±100 nA
- 0.9 -
S
- 120 150-
- 20 25 pF
- 3.0 4.0
- 5 20
- 25 60
ns
- 7 25
- 25 60
- 5.0 6.0 nC
- 1.0
- 2.6
- 160 -
ns
- 0.3 - nC
S061
Rev.A
www.gmesemi.com
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डाउनलोड[ BL1N60F Datasheet.PDF ]


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