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BL18N25F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - GME

भाग संख्या BL18N25F
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स GME 
लोगो GME लोगो 
पूर्व दर्शन
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<?=BL18N25F?> डेटा पत्रक पीडीएफ

BL18N25F pdf
Production specification
N-Channel Power MOSFET
BL18N25F
4. Drain current limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=250µA
Drain-Source Leakage Current
IDSS VDS=250V, VGS=0V
Gate- Source Leakage Current
IGSS VDS=0V, VGS=±20V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250μA
Static drain-Source On-State resistance RDS(on) VGS=10V,ID=18A
Drain-Source Diode Forward Voltage
VSD
ISD=18A,VGS=0
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V,VGS=0V,f=1.0MHz
Reverse Transfer Capacitance
CRSS
Turn-On Delay Time
tD(ON)
Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD = 30V, ID=18A,
RG=25, (Note 1, 2)
Fall Time
tF
Total Gate Charge
Qg
Gate-source Charge
Gate-drain Charge
Qgs
VDS=125V,VGS=10V
ID=18A
Qgd
Maximum Body-Diode Continuous
Current
IS
Maximum Body-Diode Pulsed Current ISM
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%.
2. Essentially independent of operating temperature.
250 -
--
--
2.0 -
- 0.16
--
- 2200
- 330
- 25
- 15
- 130
- 30
- 100
- 30
- 10
- 10
--
--
MAX
-
1
±100
4.0
0.24
1.4
2860
430
40
25
195
45
150
45
-
-
18
72
UNIT
V
μA
nA
V
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
S060
Rev.A
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डाउनलोड[ BL18N25F Datasheet.PDF ]


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