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BF660W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP Silicon RF Transistor - Siemens Semiconductor Group

भाग संख्या BF660W
समारोह PNP Silicon RF Transistor
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
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<?=BF660W?> डेटा पत्रक पीडीएफ

BF660W pdf
BF 660W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Base-emitter breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 20 , IE = 0
DC current gain
IC = 3 mA, VCE = 10 V
AC Characteristics
Transition frequency
IC = 5 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, VBE = vbe = 0 , f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, VBE = vbe = 0 , f = 1 MHz
V(BR)CEO
30
V(BR)CBO
40
V(BR)EBO
4
ICBO
-
hFE
30
fT
-
Ccb
-
Cce
-
-
-
-
-
-
700
0.4
0.15
max.
-
-
-
50
-
-
-
-
Unit
V
nA
-
MHz
pF
Semiconductor Group
2
Aug-14-1996

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डाउनलोड[ BF660W Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
BF660PNP Silicon RF TransistorSiemens Semiconductor Group
Siemens Semiconductor Group
BF660WPNP Silicon RF TransistorSiemens Semiconductor Group
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