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BF660 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP Silicon RF Transistor - Siemens Semiconductor Group

भाग संख्या BF660
समारोह PNP Silicon RF Transistor
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
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<?=BF660?> डेटा पत्रक पीडीएफ

BF660 pdf
BF 660
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 20 V, IE = 0
DC current gain
IC = 3 mA, VCE = 10 V
AC Characteristics
Transition frequency
IC = 5 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, VBE = 0 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, VBE = 0 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR) CE0 30
V(BR) CB0 40
V(BR) EB0 4
ICB0
hFE 30
–V
50 nA
––
fT – 700 – MHz
Ccb – 0.6 – pF
Cce – 0.28 –
Semiconductor Group
2

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डाउनलोड[ BF660 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
BF660PNP Silicon RF TransistorSiemens Semiconductor Group
Siemens Semiconductor Group
BF660WPNP Silicon RF TransistorSiemens Semiconductor Group
Siemens Semiconductor Group


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