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BF543 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N Channel MOS FET Triode - Siemens Semiconductor Group

भाग संख्या BF543
समारोह Silicon N Channel MOS FET Triode
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
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<?=BF543?> डेटा पत्रक पीडीएफ

BF543 pdf
BF 543
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC Characteristics
Drain-source breakdown voltage
ID = 10 µA, – VGS = 4 V
Gate-source breakdown voltage
± IGS = 10 mA, VDS = 0
Gate cutoff current
± VGS = 6 V, VDS = 0
Drain current
VDS = 10 V, VGS = 0
Gate-source pinch-off voltage
VDS = 10 V, ID = 20 µA
AC Characteristics
Forward transconductance
VDS = 10 V, ID = 4 mA, f = 1 kHz
Gate-1 input capacitance
VDS = 10 V, ID = 4 mA, f = 1 MHz
Reverse transfer capacitance
VDS = 10 V, ID = 4 mA, f = 1 MHz
Output capacitance
VDS = 10 V, ID = 4 mA, f = 1 MHz
Power gain (test circuit)
VDS = 10 V, ID = 4 mA, f = 200 MHz
GG = 2 mS, GL = 0.5 mS
Noise figure (test circuit)
VDS = 10 V, ID = 4 mA, f = 200 MHz
GG = 2 mS, GL = 0.5 mS
Symbol
Values
Unit
min. typ. max.
V(BR)DS
20
V
V± (BR)GSS 7 – 12
± IGSS
50 nA
IDSS 2.0 4 6.0 mA
VGS(p)
0.7 1.5 V
gfs
9.5 12 –
mS
Cgss
2.7 –
pF
Cdg – 18 – fF
Cdss
0.9 –
pF
Gp – 22 – dB
F –1–
Semiconductor Group
2

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