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BF513 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel silicon field-effect transistors - NXP

भाग संख्या BF513
समारोह N-channel silicon field-effect transistors
मैन्युफैक्चरर्स NXP 
लोगो NXP लोगो 
पूर्व दर्शन
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<?=BF513?> डेटा पत्रक पीडीएफ

BF513 pdf
Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
BF510 to 513
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
MARKING CODE
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
handbook, halfpage
3
PINNING - SOT23
1 = gate
2 = drain
3 = source
1
Top view
2
d
g
s
MAM385
QUICK REFERENCE DATA
Drain-source voltage
Drain current (DC or average)
Total power dissipation
up to Tamb = 40 °C
Drain current
VDS = 10 V; VGS = 0
Transfer admittance (common source)
VDS = 10 V; VGS = 0; f = 1 kHz
Feedback capacitance
VDS = 10 V; VGS = 0
VDS = 10 V; ID = 5 mA
Noise figure at optimum source admittance
GS = 1 mS; BS = 3 mS; f = 100 MHz
VDS = 10 V; VGS = 0
VDS = 10 V; ID = 5 mA
Fig.1 Simplified outline and symbol.
VDS max.
ID max.
Ptot max.
IDSS
>
<
BF510
0.7
3.0
20
30
250
511
2.5
7.0
512
6
12
V
mA
mW
513
10 mA
18 mA
yfs  >
Crs typ.
Crs typ.
2.5 4 6 7 mS
0.3 0.3 − − pF
− − 0.3 0.3 pF
F typ.
F typ.
1.5 1.5 − − dB
− − 1.5 1.5 dB
December 1997
2

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डाउनलोड[ BF513 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
BF510N-channel silicon field-effect transistorsNXP
NXP
BF511N-channel silicon field-effect transistorsNXP
NXP


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