DataSheet.in

BF1105 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel dual-gate MOS-FETs - NXP

भाग संख्या BF1105
समारोह N-channel dual-gate MOS-FETs
मैन्युफैक्चरर्स NXP 
लोगो NXP लोगो 
पूर्व दर्शन
1 Page
		
<?=BF1105?> डेटा पत्रक पीडीएफ

BF1105 pdf
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
FEATURES
Short channel transistor with high
forward transfer admittance to input
capacitance ratio
Low noise gain controlled amplifier
up to 1 GHz.
Internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
PINNING
PIN
1
2
3
4
DESCRIPTION
source
drain
gate 2
gate 1
APPLICATIONS
VHF and UHF applications with 5 V
supply voltage, such as television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1105,
BF1105R and BF1105WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
page
4
3
1
Top view
2
MSB014
BF1105 marking code: NEp.
Fig.1 Simplified outline
(SOT143B).
handbook, 2 co3lumns
4
2
Top view
1
MSB035
BF1105R marking code: NAp.
Fig.2 Simplified outline
(SOT143R).
alfpage
3
4
2
Top view
1
MSB842
BF1105WR marking code: NA.
Fig.3 Simplified outline
(SOT343R).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
yfs
Cig1-ss
Crss
F
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
Xmod
Tj
cross-modulation
operating junction temperature
CONDITIONS
MIN.
Tamb 80 °C
25
f = 1 MHz
f = 800 MHz
input level for k = 1% at 40 dB AGC 100
TYP.
31
2.2
25
1.7
MAX. UNIT
7V
30 mA
200 mW
mS
2.7 pF
40 fF
2.5 dB
dBµV
150 °C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1997 Dec 02
2

विन्यास 16 पेज
डाउनलोड[ BF1105 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
BF1100Dual-gate MOS-FETsNXP
NXP
BF1100RDual-gate MOS-FETsNXP
NXP


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English