DataSheet.in

2SC3052 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Epitaxial Planar Transistor - GME

भाग संख्या 2SC3052
समारोह Silicon Epitaxial Planar Transistor
मैन्युफैक्चरर्स GME 
लोगो GME लोगो 
पूर्व दर्शन
1 Page
		
<?=2SC3052?> डेटा पत्रक पीडीएफ

2SC3052 pdf
Production specification
Silicon Epitaxial Planar Transistor
2SC3052
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
50
MAX UNIT
V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0
50
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
V(BR)EBO
ICBO
IEBO
hFE
Collector to Emitter saturation voltage VCE(sat)
IE=100μA,IC=0
VCB=50V,IE=0
VEB=6V,IC=0
VCE=6V,IC=1mA
VCE=6V,IC=0.1mA
IC=100mA, IB=10mA
6
150
90
V
0.1 μA
0.1 μA
800
0.3 V
Collector output capacitance
Transition frequency
Noise Figure
Cob
fT
NF
CLASSIFICATION OF hFE
VCB=6V,IE=0,f=1MHz
VCE=6V, IC= 10mA
VCE=6V,IE=0.1mA,
f=1kHz,RG=2k
2.5 pF
200 MHz
20 dB
Rank
Range
Marking
E
150-300
LE
F
250-500
LF
G
400-800
LG
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
C159
Rev.A
www.gmesemi.com
2

विन्यास 4 पेज
डाउनलोड[ 2SC3052 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
2SC3051SILICON NPN TRIPLE DIFFUSED TYPE TRANSISTORToshiba
Toshiba
2SC3052Silicon Epitaxial Planar TransistorGME
GME


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English