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2SA1235A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Epitaxial Planar Transistor - GME

भाग संख्या 2SA1235A
समारोह Silicon Epitaxial Planar Transistor
मैन्युफैक्चरर्स GME 
लोगो GME लोगो 
पूर्व दर्शन
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<?=2SA1235A?> डेटा पत्रक पीडीएफ

2SA1235A pdf
Production specification
Silicon Epitaxial Planar Transistor
2SA1235A
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-50
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-6
V
Collector cut-off current
ICBO VCB=-50V,IE=0
-0.1 μA
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
VEB=-6V,IC=0
VCE=-6V,IC=-1mA
VCE=-6V,IC=-0.1mA
IC=-100mA, IB=-10mA
150
90
-0.1 μA
800
-0.3 V
Transition frequency
fT VCE=-6V, IC=-10mA
200 MHz
Collector output capacitance
Noise figure
Cob VCB=-6V,IE=0,f=1MHz
NF
VCE=-6V,IE=0.3mA,
f=100MHz,RG=10k
4
20
pF
dB
CLASSIFICATION OF hFE(1)
Rank
E
F
G
Range
Marking
150-300
ME
250-500
MF
400-800
MG
C094
Rev.A
www.gmesemi.com
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