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BD681 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - DARLINGTON POWER TRANSISTORS NPN SILICON - ON Semiconductor

भाग संख्या BD681
समारोह DARLINGTON POWER TRANSISTORS NPN SILICON
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
पूर्व दर्शन
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<?=BD681?> डेटा पत्रक पीडीएफ

BD681 pdf
BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Breakdown Voltage, (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 50 mAdc, IB = 0)
BD675, 675A
BD677, 677A
BD679, 679A
BD681
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = Rated BVCEO, IE = 0, TC = 100’C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Currert Gain, (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc,VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage, (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc, IB = 30 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, IB = 40 mAdc)
BD675, 677, 679, 681
BD675A, 677A, 679A
BD677, 679, 681
BD675A, 677A, 679A
Base−Emitter On Voltage, (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, VCE = 3 0 Vdc)
BD677, 679, 681
BD675A, 677A, 679A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
BVCEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
hfe
Min
45
60
80
100
750
750
1.0
Max Unit
− Vdc
500 mAdc
mAdc
0.2
2.0
2.0 mAdc
2.5 Vdc
2.8
Vdc
2.5
2.5
−−
50
45
40
35
30
25
20
15
10
5.0
0
15
30 45 60 75 90 105 120 135 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
165
5.0
2.0
1.0
0.5
0.2
0.1
0.05
1.0
BONDING WIRE LIMIT
THERMALLY LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
TC = 25°C
BD675, 675A
BD677, 677A
BD679, 679A
BD681
2.0 5.0 10 20
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
100
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
http://onsemi.com
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डाउनलोड[ BD681 Datasheet.PDF ]


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