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CCS020M12CM2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Six-Pack (Three Phase) Module - Cree

भाग संख्या CCS020M12CM2
समारोह Silicon Carbide Six-Pack (Three Phase) Module
मैन्युफैक्चरर्स Cree 
लोगो Cree लोगो 
पूर्व दर्शन
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<?=CCS020M12CM2?> डेटा पत्रक पीडीएफ

CCS020M12CM2 pdf
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS Drain - Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IDSS Zero Gate Voltage Drain Current
1.2
1.7 2.2
1.6
kV VGS, = 0 V, ID = 100 µA
VDS = 10 V, ID = 1 mA
V Fig. 7
VDS = 10 V, ID = 1 mA, TJ = 150 ˚C
1
100
μA VDS = 1.2 kV, VGS = 0V
10
250
μA VDS = 1.2 kV, VGS = 0V,TJ = 150 ˚C
IGSS Gate-Source Leakage Current
RDS(on) On State Resistance
gfs Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
1
80
145
9.8
8.5
900
181
5.9
250
98
208
nA
mΩ
S
VGS = 20 V, VDS = 0V
VGS = 20 V, IDS = 20 A
VGS = 20 V, IDS = 20 A, TJ = 150 ˚C
VDS = 20 V, IDS = 20 A
VDS = 20 V, ID = 20 A, TJ = 150 ˚C
Fig.
4-6
Fig. 8
pF
VDS = 800 V, f = 1 MHz,
VAC = 25 mV
Fig.
16,17
Eon T u r n - O n S w i t c h in g E n e r g y
EOff T u r n - O f f S w it c h in g E n e r g y
0.41
0.07
mJ
VDD = 800 V, VGS = -5V/+20V
ID = 20 A, RG(ext) = 2.5 Ω
Load = 412 μH, TJ = 150 ˚C
mJ Note: IEC 60747-8-4 Definitions
Fig. 22
RG (int)
QGS
QGD
QG
Internal Gate Resistance
Gate-Source Charge
Gate-Drain Charge
Total Gate Charge
3.8
16.1
20.7
61.5
Ω f = 1 MHz, VAC = 25 mV
nC
VDD= 800 V, VGS = -5V/+20V,
ID= 20 A, Per JEDEC24 pg 27
Fig. 15
td(on)
tr(on)
td(off)
tf(off)
VSD
Turn-on delay time
VSD fall time 90% to 10%
Turn-off delay time
VSD rise time 10% to 90%
Diode Forward Voltage
QC Total Capacitive Charge
10
14
22.4
53
1.5
1.8
0.27
ns VDD = 800V, VGS = -5/+20V,
ns ID = 20 A, RG(ext) = 2.5 Ω,
ns
Timing relative to VDS
Note: IEC 60747-8-4, pg 83
ns Resistive load
1.7 V IF = 20 A, VGS = 0, TJ = 25 ˚C
2.3 IF = 20 A, VGS = 0, TJ = 150 ˚C
μC
ISD = 20 A, VDS = 800V
di/dt = 1500 A/μs, VGS = -5V
Fig. 24
Fig. 10
Fig. 11
Thermal Characteristics
Symbol
Parameter
RthJCM
RthJCD
Thermal Resistance Juction-to-Case for MOSFET
Thermal Resistance Juction-to-Case for Diode
Additional Module Data
Symbol
W Weight
M Mounting Torque
Clearance Distance
Condition
Creepage Distance
Min.
Typ.
0.7
0.8
Max. Unit
0.75
0.85
˚C/W
Max.
180
5.0
14.09
14.11
17.46
Unit
g
Nm
mm
mm
mm
Test Conditions
Note
Fig. 27
Fig. 28
Test Condition
To Heatsink and terminals
Terminal to terminal
Terminal to terminal
Terminal to baseplate
2 CCS020M12CM2,Rev. -

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डाउनलोड[ CCS020M12CM2 Datasheet.PDF ]


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