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C4D15120D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - CREE

भाग संख्या C4D15120D
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स CREE 
लोगो CREE लोगो 
पूर्व दर्शन
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<?=C4D15120D?> डेटा पत्रक पीडीएफ

C4D15120D pdf
Electrical Characteristics (Per Leg)
Symbol Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
1.5
2.2
1.8
3
V
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
IR Reverse Current
35
100
250
350
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
QC Total Capacitive Charge
VR = 800 V, IF = 8 A
37 nC di/dt = 200 A/μs
TJ = 25°C
C Total Capacitance
560 VR = 0 V, TJ = 25°C, f = 1 MHz
37 pF VR = 400 V, TJ = 25˚C, f = 1 MHz
27 VR = 800 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
10.5
μJ VR = 800 V
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
* Per Leg, ** Per Device
Typ.
1.11*
0.56**
Max.
Unit
°C/W
Note
Fig. 9
Typical Performance
14
TJ=-55°C
12 TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
10
8
6
4
2
800
700
600
500
400
300 TJ=-55°C
TJ= 25°C
TJ= 75°C
200 TJ =125°C
TJ =175°C
100
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VF (V)
Figure 1. Forward Characteristics
0
0 500 1000 1500
VR (V)
Figure 2. Reverse Characteristics
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
2000
2 C4D15120D Rev. D, 12-2017

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डाउनलोड[ C4D15120D Datasheet.PDF ]


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C4D15120ASilicon Carbide Schottky DiodeCree
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