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C4D15120H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - CREE

भाग संख्या C4D15120H
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स CREE 
लोगो CREE लोगो 
पूर्व दर्शन
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<?=C4D15120H?> डेटा पत्रक पीडीएफ

C4D15120H pdf
Electrical Characteristics
Symbol Parameter
Typ.
Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
2.3
35
120
77.5
1200
70
50
1.8
3
200
300
V
IF = 15 A TJ=25°C
IF = 15 A TJ=175°C
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
VR = 800 V, IF = 15A
nC di/dt = 200 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
22
μJ VR = 800 V
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.86
Unit
°C/W
Note
Fig. 9
Typical Performance
30
TJ=-55°C
25 TTTTJJJJ====27115527°°55CC°°CC
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VF (V)
Figure 1. Forward Characteristics
2
1.8
1.6
1.4
1.2
1
0.8
TJ=-55°C
0.6
0.4
TTTTJJJJ====27115527°°55CC°°CC
0.2
0
200 400 600 800 1000 1200 1400 1600 1800
VR (V)
Figure 2. Reverse Characteristics
2 C4D15120H Rev. -, 02-2018

विन्यास 6 पेज
डाउनलोड[ C4D15120H Datasheet.PDF ]


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