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C4D10120H डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - CREE

भाग संख्या C4D10120H
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स CREE 
लोगो CREE लोगो 
पूर्व दर्शन
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<?=C4D10120H?> डेटा पत्रक पीडीएफ

C4D10120H pdf
Electrical Characteristics
Symbol Parameter
Typ.
Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
2.2
30
55
52
754
45
38
1.8
3
250
350
V
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
VR = 800 V, IF = 10A
nC di/dt = 200 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
14.5
μJ VR = 800 V
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
0.98
Unit
°C/W
Note
Fig. 9
Typical Performance
20
18
16
14
12
10
8
6
4
2
0
0
TJ=-55°C
TTTTJJJJ====27115527°°55CC°°CC
0.5 1 1.5 2 2.5
VF FoVrwF a(rVd)Voltage
3
Figure 1. Forward Characteristics
3.5
600.00
500.00
400.00
300.00
200.00
100.00
TJ=-55°C
TTTTJJJJ====27115527°°55CC°°CC
0.00
0
500 1000 1500
VR RVevRe(rsVe)Voltage
Figure 2. Reverse Characteristics
2000
2 C4D10120H Rev. -, 02-2018

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