# C3D20065D डेटा पत्रक PDF( Datasheet डाउनलोड )

## डेटा पत्रक - Silicon Carbide Schottky Diode - CREE

 भाग संख्या C3D20065D समारोह Silicon Carbide Schottky Diode मैन्युफैक्चरर्स CREE लोगो पूर्व दर्शन 1 Page ``` Electrical Characteristics (Per Leg) Symbol Parameter Typ. Max. Unit Test Conditions VF Forward Voltage IR Reverse Current QC Total Capacitive Charge C Total Capacitance 1.5 2.0 12 24 24 460.5 44 40 1.8 2.4 60 220 V IF = 10 A TJ=25°C IF = 10 A TJ=175°C μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C VR = 400 V, IF = 10 A nC di/dt = 500 A/μs TJ = 25°C VR = 0 V, TJ = 25°C, f = 1 MHz pF VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz EC Capacitance Stored Energy 3.6 μJ VR = 400 V Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance from Junction to Case ** Per Leg, * Both Legs Typ. 1.3** 0.65* Unit °C/W Note Fig. 9 Note Fig. 1 Fig. 2 Fig. 5 Fig. 6 Fig. 7 Typical Performance (Per Leg) 30 25 TJ = -55 °C TJ = 25 °C 20 TJ = 75 °C TJ = 125 °C 15 TJ = 175 °C 10 5 0 0 2000.0 400.50 1 .6000 1 . 5 8002 . 0 1020.05 132.000 3 . 5 4.0 4.5 5.0 FowardVVFol(taVg)e, VF (V) Figure 1. Forward Characteristics 100 90 80 70 60 TJ = 175 °C 50 TJ = 125 °C 40 TJ = 75 °C 30 TJ = 25 °C 20 TJ = -55 °C 10 0 0 100 200 300 400 500 600 700 800 900 1000 ReverseVVRolt(aVge), VR (V) Figure 2. Reverse Characteristics 2 C3D20065D Rev. A, 04-2016 ``` विन्यास 6 पेज डाउनलोड [ C3D20065D Datasheet.PDF ]

### अनुशंसा डेटापत्रक

 भाग संख्या विवरण विनिर्माण C3D20065D Silicon Carbide Schottky Diode CREE

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