# C3D16065D डेटा पत्रक PDF( Datasheet डाउनलोड )

## डेटा पत्रक - Silicon Carbide Schottky Diode - CREE

 भाग संख्या C3D16065D समारोह Silicon Carbide Schottky Diode मैन्युफैक्चरर्स CREE लोगो पूर्व दर्शन 1 Page ``` Electrical Characteristics (Per Leg) Symbol Parameter VF Forward Voltage IR Reverse Current Typ. 1.5 2.1 10 12 Max. 1.8 2.4 51 204 Unit V μA QC Total Capacitive Charge 20 C Total Capacitance 395 37 32 EC Capacitance Stored Energy 3.0 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics nC pF μJ Test Conditions IF = 8 A TJ=25°C IF = 8 A TJ=175°C VR = 650 V TJ=25°C VR = 650 V TJ=175°C VR = 400 V, IF = 8A di/dt = 500 A/μs TJ = 25°C VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 400 V Symbol Parameter RθJC Thermal Resistance from Junction to Case * Per Leg, ** Per Device Typ. 1.5 * 0.75 ** Unit °C/W Note Fig. 9 Note Fig. 1 Fig. 2 Fig. 5 Fig. 6 Fig. 7 Typical Performance (Per Leg) 20 18 TJ = -55 °C 16 TJ = 25 °C 14 TJ = 75 °C 12 TJ = 125 °C 10 TJ = 175 °C 8 6 4 2 0 0 2000.0 4000.5 6010.0 8010.5 1020.00 1220.50 3.0 3.5 4.0 FowardVVFol(taVg)e, VF (V) Figure 1. Forward Characteristics 30 25 20 TJ = 175 °C 15 TJ = 125 °C TJ = 75 °C 10 TJ = 25 °C TJ = -55 °C 5 0 0 100 200 300 400 500 600 700 800 900 1000 ReverseVVRol(taVge), VR (V) Figure 2. Reverse Characteristics 2 C3D16065D Rev. B, 7-2016 ``` विन्यास 6 पेज डाउनलोड [ C3D16065D Datasheet.PDF ]

### अनुशंसा डेटापत्रक

 भाग संख्या विवरण विनिर्माण C3D16065A Silicon Carbide Schottky Diode Cree C3D16065D Silicon Carbide Schottky Diode CREE

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