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C3D10065E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - CREE

भाग संख्या C3D10065E
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स CREE 
लोगो CREE लोगो 
पूर्व दर्शन
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C3D10065E pdf
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
2.0
12
24
24
460.5
44
40
1.8
2.4
60
220
V
IF = 10 A TJ=25°C
IF = 10 A TJ=175°C
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 10 A
nC di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
3.6
μJ VR = 400 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
1.0
Unit
°C/W
Note
Fig. 9
Typical Performance
30
25 TJ = -55 °C
TJ = 25 °C
20 TJ = 75 °C
TJ = 125 °C
15
TJ = 175 °C
10
5
0
0 02.00 0 0 .5 4010.0 1 . 56002 .0 820.50 3 . 010030.5 14.2000 4 .5 5.0
FowardVVFol(taVg)e, VF (V)
Figure 1. Forward Characteristics
100
90
80
70
60 TJ = 175 °C
50 TJ = 125 °C
40 TJ = 75 °C
30 TJ = 25 °C
20 TJ = -55 °C
10
0
0 100 200 300 400 500 600 700 800 900 1000
ReverseVVRolt(aVge), VR (V)
Figure 2. Reverse Characteristics
2 C3D10065E Rev. B, 01-2018

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