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C3D06065I डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - CREE

भाग संख्या C3D06065I
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स CREE 
लोगो CREE लोगो 
पूर्व दर्शन
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C3D06065I pdf
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5
2.0
8
15.5
15
295
28.5
25.5
1.7
2.4
40
160
V
IF = 6 A TJ=25°C
IF = 6 A TJ=175°C
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 6 A
nC di/dt = 500 A/μs
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
2.3
μJ VR = 400 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
3.3
Unit
°C/W
Note
Fig. 9
Typical Performance
14
12 TJ = -55 °C
TJ = 25 °C
10
TJ = 75 °C
8 TJ = 125 °C
6 TJ = 175 °C
4
2
0
0 02.00 0 0 .5 400 1 .0 6010.5 820.00 21.5000 3 . 0 12003 .5 4.0
FowardVVFo(ltVag)e, VF (V)
Figure 1. Forward Characteristics
2 C3D06065I Rev. B, 01-2016
20
16
12 TJ = 175 °C
TJ = 125 °C
8 TJ = 75 °C
TJ = 25 °C
4 TJ = -55 °C
0
0 100 200 300 400 500 600 700 800 900 1000
ReverseVVRol(taVge), VR (V)
Figure 2. Reverse Characteristics

विन्यास 6 पेज
डाउनलोड[ C3D06065I Datasheet.PDF ]


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