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C3D03065E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - CREE

भाग संख्या C3D03065E
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स CREE 
लोगो CREE लोगो 
पूर्व दर्शन
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<?=C3D03065E?> डेटा पत्रक पीडीएफ

C3D03065E pdf
Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
QC Total Capacitive Charge
C Total Capacitance
1.5 1.7
1.8 2.4
5 24
9.5 96
7.6
166
14
11
V
IF = 3 A TJ=25°C
IF = 3 A TJ=175°C
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
VR = 400 V, IF = 3A
nC di/dt = 500 A/μS
TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz
pF VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
EC Capacitance Stored Energy
1.1
μJ VR = 400 V
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
3.2
Unit
°C/W
Note
Fig. 8
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
10
TJ = -55 °C
8 TJ = 25 °C
TJ = 75 °C
6 TJ = 125 °C
TJ = 175 °C
4
2
10
8
TJ = 175 °C
6
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
4 TJ = -55 °C
2
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
FowarVd FVo(ltVag)e, VF (V)
Figure 1. Forward Characteristics
0
0 200 400 600 800
ReversVe VRo(ltVag)e, VR (V)
Figure 2. Reverse Characteristics
1000
2 C3D03065E Rev. A, 04-2016

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