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C3D1P7060Q डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Carbide Schottky Diode - CREE

भाग संख्या C3D1P7060Q
समारोह Silicon Carbide Schottky Diode
मैन्युफैक्चरर्स CREE 
लोगो CREE लोगो 
पूर्व दर्शन
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<?=C3D1P7060Q?> डेटा पत्रक पीडीएफ

C3D1P7060Q pdf
Electrical Characteristics
Symbol
Parameter
VF Forward Voltage
IR Reverse Current
Typ.
1.5
1.7
3
6
Max.
1.7
2.4
15
55
Unit
V
μA
QC Total Capacitive Charge
4
C Total Capacitance
82.5
7
6
EC Capacitance Stored Energy
0.6
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
nC
pF
μJ
Test Conditions
IF = 1.7 A TC=25°C
IF = 1.7 A TC=150°C
VR = 600 V TC=25°C
VR = 600 V TC=150°C
VR = 400 V, IF = 1.7A
di/dt = 500 A/μs
TC = 25°C
VR = 0 V, TC = 25°C, f = 1 MHz
VR = 200 V, TC = 25˚C, f = 1 MHz
VR = 400 V, TC = 25˚C, f = 1 MHz
VR = 400 V
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
3.8
Unit
°C/W
Note
Fig. 9
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Typical Performance
14
12 TJ = -55 °C
TJ = 25 °C
10
TJ = 75 °C
8 TJ = 125 °C
6 TJ = 150 °C
4
2
0
0 2000.0 400 1 . 0 600 2 8.000 1030.00 12004 . 0
FowardVVFo(ltVag)e, VF (V)
5.0
Figure 1. Forward Characteristics
6.0
2 C3D1P7060Q Rev. F, 10-2015
100
80
60 TJ = 150 °C
TJ = 125 °C
40 TJ = 75 °C
TJ = 25 °C
20 TJ = -55 °C
0
0 100 200 300 400 500 600 700 800 900 1000 1100
ReverseVVRol(taVge), VR (V)
Figure 2. Reverse Characteristics

विन्यास 7 पेज
डाउनलोड[ C3D1P7060Q Datasheet.PDF ]


शेयर लिंक


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भाग संख्याविवरणविनिर्माण
C3D1P7060QSilicon Carbide Schottky DiodeCREE
CREE


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