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S4M02-600F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors - LITE-ON

भाग संख्या S4M02-600F
समारोह Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors
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S4M02-600F pdf
RATING AND CHARACTERISTIC CURVES
S4M02-600F
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/16" from Case for 10 Seconds
Symbol
RthJC
RthJA
TL
Value
7.0
75
260
Unit
/W
ELECTRICAL CHARACTERISTICS (TJ=25unless otherwise noted)
Characteristics
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Reptitive Forward or Reverse Blocking Current
(VAK=Rated VDRM and VRRM; RGK =1K Ohms)
TJ = 25
TJ =110
IDRM
IRRM
----
----
---- 10
---- 200
uA
ON CHARACTERISTICS
Peak Forward On-State Voltage @TJ=25
(ITM= 8.0A Peak, Pulse Width1.0 ms, Duty Cycle 1%)
Gate Trigger Current (VAK = 12 V ; RL = 100 Ohms) (1)
VTM ---- ---- 2.0 Volts
IGT ---- ---- 200 uA
Holding Current (VAK = 12 V, RL = 100 Ohms )
IH ---- ---- 5.0 mA
Gate Trigger Voltage (VAK = 12 V ; RL =100 Ohms) (1)
Latching Current (VAK = 12 V, RL = 100 Ohms )
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(VAK =0.67% Rated VDRM,Exponential Waveform, TJ=110
,RGK=1Kohm)
(1) RGK current is not included in measurement
VGT ---- ---- 1.0 Volts
IL ---- ---- 10 mA
dv/dt
---- 10 ---- V/us

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S4M02-600FSensitive Gate Sillicon Controlled Rectifiers Reverse Blocking ThyristorsLITE-ON
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