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5082-3077 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PIN Diodes - AVAGO

भाग संख्या 5082-3077
समारोह PIN Diodes
मैन्युफैक्चरर्स AVAGO 
लोगो AVAGO लोगो 
पूर्व दर्शन
1 Page
		
<?=5082-3077?> डेटा पत्रक पीडीएफ

5082-3077 pdf
Mechanical Specifications
The Avago Outline 15 package has a glass hermetic seal with
dumet leads. The lead finish is 95-5 tin-lead (SnPb) for all
PIN diodes. The leads on the Outline 15 package should be
restrictedsothatthebendstartsatleast1/16 inch(1.6  mm)
from the glass body. Typi­cal package inductance and ca-
pacitance are 2.5 nH and 0.13  pF, respectively. Marking is
by digital coding with a cathode band.
General Purpose Diodes
Electrical Specifications at TA = 25°C
Maximum
Minimum
Part
Total Breakdown
Number
Capacitance
Voltage
5082-
CT (pF)
VBR (V)
Maximum
Residual Series
Resistance
RS ()
Effective Carrier
Lifetime
τ (ns)
General Purpose Switching and Attenuating
3001
0.25
200
1.0
100 (min.)
3039
0.25
150
1.25
100 (min.)
1N5719
0.3**
150
1.25
100 (min.)
3077
0.3
200
1.5
100 (min.)
  Band Switching
3188
1.0*
35 0.6**
70 (typ.)*
Test
Conditions
VR = 50 V
VR = VBR
*VR = 20 V
Measure
**VR = 100 V
IR ≤ 10 µA
f = 1 MHz
IF =100 mA
*IF = 20 mA
**IF = 10 mA
f = 100 MHz
IF = 50 mA
IR = 250 mA
*IF = 10 mA
*IR = 6 mA
Notes:
Typical CW power switching capability for a shunt switch in a 50Ω system is 2.5 W.
Reverse Recovery
Time
trr (ns)
100 (typ.)
100 (typ.)
100 (typ.)
100 (typ)
12 (typ.)
IF = 20 mA
VR = 10 V
90% Recovery
RF Current Controlled Resistor Diodes
Electrical Specifications at TA = 25°C
Max.
High Low
Effective Min. Residual
Max.
Resistance
Resistance
Part
Carrier
Lifetime
Breakdown
Voltage
Series
Resistance
CapTaoctitaal nce Limi t, RH () Limit, RL ()
Number
τ (ns)
5082-3080 1300 (typ.)
VBR (V)
100
RS ()
2.5
CT (pF)
0.4
Min.  Max.
Min.  Max.
1000         
8**
1N5767* 1300 (typ.)
100
2.5
0.4
1000         
8**
5082-3379 1300 (typ.)
50
0.4       8**
5082-3081 2500 (typ.)
100
3.5
0.4
1500        
8**
Max.
Difference
in
Resistance
vs. Bias
Slope, Dc
ConTdei sttio n s IRIF==25500mm AA IMRV≤Re=a1s0Vu BµrReA, fIF==11000 0 MmHAz fV=R =1 5M0HVz fIF==100.001MmHAz IfFIF===12100.00mMmAHA*z*
*The 1N5767 has the additional specifications: τ = 1.0 msec minimum
          
             
IVRF==11µVAmmaaxximimuummaattIFV=R
= 50
100
V
mA.
Batch
Matched at
IaF n=d01.0.01
mA
mA
f = 100 MHz


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