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OSG65R900A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Enhancement Mode N-Channel Power MOSFET - Oriental Semiconductor

भाग संख्या OSG65R900A
समारोह Enhancement Mode N-Channel Power MOSFET
मैन्युफैक्चरर्स Oriental Semiconductor 
लोगो Oriental Semiconductor लोगो 
पूर्व दर्शन
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<?=OSG65R900A?> डेटा पत्रक पीडीएफ

OSG65R900A pdf
Thermal Characteristics
OSG65R900A,OSG65R900D,OSG65R900F
Enhancement Mode N-Channel Power MOSFET
Parameter
Symbol
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (Note 4)
RθJC
RθJA
Value
TO251/TO252 TO220F
3.4 4.8
62 62.5
Unit
°C/W
°C/W
Electrical CharacteristicsTA=25unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-state Resistance
Gate-Source Leakage Current
Drain-to-Source leakage current
Symbol
BVDSS
VGS(th)
RDS(ON)
IGSS
IDSS
Min.
650
700
2.0
Typ.
771
0.72
2.11
Max.
4.0
0.9
100
-100
1
Unit
Test condition
VGS=0V, ID=250μA
V VGS=0V,ID=250μA,
Tj=150
V VDS=VGS, ID=250μA
VGS=10V,ID=3A
Ω VGS=10V,ID=3A,
Tj=150
VGS=30V
nA
VGS=-30V
μA VDS=650V,VGS=0V
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
343 pF VGS=0V,
29 pF VDS=50V,
1.5 pF ƒ=1MHZ
15 ns
VGS=10V,
11 ns VDS=380V,
23 ns RG=25Ω
22 ns ID=5A
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