DataSheet.in

AS7C31026 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 5V/3.3V 64K x 16 CMOS SRAM - Alliance Semiconductor

भाग संख्या AS7C31026
समारोह 5V/3.3V 64K x 16 CMOS SRAM
मैन्युफैक्चरर्स Alliance Semiconductor 
लोगो Alliance Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=AS7C31026?> डेटा पत्रक पीडीएफ

AS7C31026 pdf
AS7C1026
AS7C31026
®
Functional description
The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices
organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple
interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 12/15/20 ns with output enable access times (tOE) of 6, 7,8 ns are ideal for
high-performance applications.
When CE is high the devices enter stanby mode. The AS7C1026 is guaranteed not to exceed 28 mW power consumption in CMOS
standby mode.
A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O0–I/O15 is written
on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only
after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. the chips drive I/
O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is
active, output drivers stay in high-impedance mode.
The devices provide multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be
written and read. LB controls the lower bits, I/O0–I/O7, and UB controls the higher bits, I/O8–I/O15.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5V supply (AS7C1026) or 3.3V supply
(AS7C31026). the device is packaged in common industry standard packages. BGA packaging, easy to use in manufacturing,
provides the smallest possible footprint. This 48-ball JEDEC-registered package has a ball pitch of 0.75 mm and external dimensions
of 8 mm × 6 mm.
Absolute maximum ratings
Parameter
Symbol
Min
Max Unit
Voltage on VCC relative to GND
AS7C1026
AS7C31026
Vt1
Vt1
–0.50
–0.50
+7.0
+5.0
V
V
Voltage on any pin relative to GND
Vt2
–0.50
VCC +0.50
V
Power dissipation
Storage temperature (plastic)
Ambient temperature with VCC applied
PD
Tstg –65
Tbias –55
1.0
+150
+125
W
°C
°C
DC current into outputs (low)
IOUT
20 mA
Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods may affect reliability.
Truth table
CE WE OE LB UB I/O0–I/O7 I/O8–I/O15
Mode
H
X
X
X
X
High Z
High Z
Standby (ISB), ISBI)
L
H
L
L
H
DOUT
High Z
Read I/O0–I/O7 (ICC)
L
H
L
H
L
High Z
DOUT
Read I/O8–I/O15 (ICC)
L H L L L DOUT DOUT Read I/O0–I/O15 (ICC)
L L X L L DIN
DIN Write I/O0–I/O15 (ICC)
L
L
X
L
H
DIN
High Z
Write I/O0–I/O7 (ICC)
3/21/02; v.1.6
Alliance Semiconductor
P. 2 of 11

विन्यास 11 पेज
डाउनलोड[ AS7C31026 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
AS7C310245V/3.3V 128K x 8 CMOS SRAMAlliance Semiconductor
Alliance Semiconductor
AS7C31024A5V/3.3V 128K x 8 CMOS SRAMAlliance Semiconductor
Alliance Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English