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AM1000 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - silicon N-channel high speed analog switch - National Semiconductor

भाग संख्या AM1000
समारोह silicon N-channel high speed analog switch
मैन्युफैक्चरर्स National Semiconductor 
लोगो National Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=AM1000?> डेटा पत्रक पीडीएफ

AM1000 pdf
absolute maximum ratings
VIN (Note 1)
VOUT {Note 11
VORIVE (Note 1)
V S1AS (Note 11
AM1QOl
+~,OV
+:>OV
-:)OV
+~lOV
AM1000
AM 1002
+40V
+4DV
-40V
+40V
electrical characteristics
ON CHARACTERISTICS (Note 21
PARAMETER
Rof'J
CONDITION
VORIVE - + 15V, V S1AS - -15V
liN - 1 rnA. V OUT - OV
AM1DOl
RON
VORIVE ~ +lOV VS1AS - -lOV
I " 1 mA, V OUT = OV
AM100D
AM1G02
Power DISSlpdtlon @ T A '" 25 C
Lmedf Derdtlng Factor
Power DISSipation @ Tc 125'C
Linear Derating Fdctor
Mdxlmum JunctIOn Operating Temperdture
Storage Temperature
Ledd Temperature (Soldering, 10 sec)
MIN
20
TYP
40
MAX
50
20 25
30
20 50 100
OFF CHARACTERISTICS
PARAMETER
IOLJT IOFF:
lOUT (OFF)
CONDITION
VORIVE - -20V, V S1AS '- -lOV
VIN '" - lOV, VOUT +lOV
TA = +25"C
T A - +125"C
VDRIVE - -20V, V S1AS -lOY
VIN - +lDV, V ouT "-10V
T A "'+25C
T A =. +125 C
MIN
AM1000
AM1001
TYP MAX
05 25
025 25
05 25
05 25
AM1002
MIN TYP MAX
05 ;
02 1
05 1
02 1
300mW
17 mWr'C
150mW
6 mWt'C
-55'C to +150"C
+200°C
+300°C
UNITS
"
U
~2
UNITS
"A
"A
nA
MA
DRIVE CHARACTERISTICS (Note 3)
PARAMETER
'OAIVE.
(Switch OFF)
CONDITION
VORIVE =. -20V, V S1AS '" -lOY AM 1000, 1001,1002
VIN = ±10V, V OUT = ±10V
MIN
TYP
5
MAX
10
UNITS
mA
SWITCHING CHARACTERISTICS
PARAMETER
CONDITION
AM1000
MAX
AM1001
MAX
AM1002
MAX
UNITS
'"tON
See SWitching Time
100
150
200
tOFF
Test CircUit
100 100 100 "'
Note 1: ~he maximum voltage ratings may be applied between any pm or pms Simultaneously. Power diSSipation may be
exceeded In some modes If the voltage pul~e exceeds 10 ms. Normal operation will not cause excessive power diSSipation
even In a de sWitching application.
Note 2: All parameters are measured with external silicon diodes. See electncal connection diagram for proper diode placement
Note 3: IBIAS (Switch OFF) is equal to IORIVE (Switch OFF). I(BIAS) (Switch ON), is equal to external diode leakage.
Nqte 4: Rise and fall times of VORIVE shall be 15 ns maximum for switching time testing.
switching time test circuit and waveforms
r----Duil
fLIXT'""'I I
-r-w: . :, , I
100
-=- LI _ _ _ _ ...JI 0:-
IN914
IN914
-10V
VORIVJ1SL::::
vOUT~DV
,I : -VOUT
J l " " 'VORtVE
,,
"
::,
,
,
:
:
.'
:-ION __',, :
" -20V
__, .·-IOfF
.s».:.
ooo
s.».:.
oo...
.s».:.
oo
N
8-21

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