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FK3F03080L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-channel MOSFET - Panasonic

भाग संख्या FK3F03080L
समारोह Silicon N-channel MOSFET
मैन्युफैक्चरर्स Panasonic 
लोगो Panasonic लोगो 
पूर्व दर्शन
1 Page
		
<?=FK3F03080L?> डेटा पत्रक पीडीएफ

FK3F03080L pdf
DReovcisNioon. . T1 T4-EA-14911
Product Standards
MOS FET
FK3F03080L
„ Electrical Characteristics Ta = 25 °C ± 3 °C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source Breakdown Voltage
VDSS ID = 1 mA, VGS = 0 V
30
Zero Gate Voltage Drain Current
IDSS VDS = 30 V, VGS = 0 V
1
Gate-source Leakage Current
IGSS VGS = ±16 V, VDS = 0 V
±10
Gate-source Threshold Voltage
Vth ID = 6.9 µA, VDS = 10 V
0.6 2.0
Drain-source On-state Resistance
RDS(on)1 ID = 10 mA, VGS = 2.5 V
RDS(on)2 ID = 100 mA, VGS = 4.5 V
4.0 12
1.0 1.4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 10 V, VGS = 0 V
f = 1 MHz
11
6.8
3.5
Turn-on Delay Time *1
ton
VDD = 3 V, VGS = 0 to 3 V
ID = 10 mA, RL = 300
20
Turn-off Delay Time *1
toff
VDD = 3 V, VGS = 3 to 0 V
ID = 10 mA, RL = 300
100
Note 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring
methods for transistors.
2. *1 Measurement circuit for Turn-on Delay Time / Turn-off Delay Time
Unit
V
µA
µA
V
pF
ns
ns
Established : 2013-12-24
Revised : ####-##-##
Page 2 of 6

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