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FK3F03010L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N-channel MOSFET - Panasonic

भाग संख्या FK3F03010L
समारोह Silicon N-channel MOSFET
मैन्युफैक्चरर्स Panasonic 
लोगो Panasonic लोगो 
पूर्व दर्शन
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<?=FK3F03010L?> डेटा पत्रक पीडीएफ

FK3F03010L pdf
FK3F03010L
Electrical Characteristics Ta = 25 °C ± 3 °C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source Breakdown Voltage
VDSS ID = 1.0 mA, VGS = 0 V
30
Zero Gate Voltage Drain Current
IDSS VDS = 30 V, VGS = 0 V
1.0
Gate-source Leakage Current
IGSS VGS = ±10 V, VDS = 0 V
±10
Gate-source Threshold Voltage
Vth ID = 1.0 μA, VDS = 3.0 V
0.5 1.0 1.5
Drain-source On-state Resistance
RDS(on)1 ID = 10 mA, VGS = 2.5 V
RDS(on)2 ID = 10 mA, VGS = 4.0 V
36
23
Forward Transfer Admittance
|Yfs| ID = 10 mA, VDS = 3.0 V
20 55
Input Capacitance
Ciss
12
Output Capacitance
Coss VDS = 3 V, VGS = 0 V, f = 1 MHz
7
Reverse Transfer Capacitance
Crss
3
Turn-on Time *1
VDD = 3 V, VGS = 0 to 3 V,
ton RL = 300 Ω
100
Turn-off Time *1
toff
VDD = 3 V, VGS = 3 to 0 V,
RL = 300 Ω
100
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
*1 See Test circuit.
Unit
V
μA
μA
V
Ω
mS
pF
ns
ns
Ver. BED
2

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डाउनलोड[ FK3F03010L Datasheet.PDF ]


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